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TPA3250 Digital Amplifier Board 130Wx2 High Power 4A 32V Class D Supply

Original price was: $3,000.00.Current price is: $900.00.
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16 - 23 Mar, 2025
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Description

TPA3250 Digital Amplifier Board 130Wx2 High Power 4A 32V Class D Audio Amplifier Board with XH2.54mm-3P Shielded Cable

 

Product Description

 

TPA3250 digital power amplifier board 130W+130W Class D audio amplifier board HIFI 2.0 channel DIY home amplifier


Original imported TPA3250 is adopted


Electrolytic capacitor signal main loop adopts the chip electrolytic capacitor capacity of 4×220UF to ensure the strong and continuous power support.


High precision patch resistors are selected to ensure good signal-to-noise ratio of the whole machine.


PCB adopts 1.6mm thick double-sided plate, 2.0ANSI copper thick, tin spray process, to ensure good current through the performance. First-class PCB quality.


Adopt full shielding high current inductor to ensure the sound crisp and strong.


Basic parameters:


1. Working mode: D type


2. Static current: 50mA


3. Working efficiency: 90%


4. Rated output power: 2*130W


5. Frequency response: 20Hz to 20KHz


6. Working voltage: DC18V to DC32V


7. Maximum output current: 4A


8. Size: Length 103* width 78* height 15MM


The Texas Instruments TPA3250 device is a high-performance Class D power amplifier that delivers truly high-quality sound with Class D efficiency. The device features an advanced integrated feedback design and proprietary high-speed gate driver error correction (PurePath™ Ultra-HD). This technology enables ultra-low distortion and superior audio quality in the audio band. Powered by a 32 V power supply, the device can provide up to 2 W x 130 W peak drive for 4 Ω loads or 2 W x 70 W continuous drive for 8 Ω loads with 2 VRMS analog input interface. It can be seamlessly connected with TI PCM5242 and other high-performance Dacs. In addition to excellent audio performance, the TPA3250 also achieves high power efficiency and no-load power consumption at a power level of less than 1 W. This is achieved through the use of a 60 mΩ MOSFET and an optimized gate driver scheme with much lower no-load losses than typical discrete devices.

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